摘要
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。随着烧结气氛压力和成型压力增加，反应烧结碳化硅中游离硅量减少，电阻率增加。其烧结机理以碳的溶解及碳化硅的淀析过程为主。
The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.The amount of free silicon in RBSiC was declined and the resistivity of RBSiC was increased with increase of sintering atmosphere pressure and forming pressure.The sintering mechanism is characterized by the carbon dissolved in melt silicon and precipitation of SiC from melt silicon.
出处
《硅酸盐通报》
CAS
CSCD
1999年第5期51-54,共4页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金
