摘要
探讨了用（Ｓｉ＋Ｍｏ）合金浸渗反应烧结ＳｉＣ，研制了烧结温度为１６５０℃的反应烧结ＳｉＣ，并且探索了以难熔的第二相ＭｏＳｉ＿２取代反应烧结ＳｉＣ方法。所获得的ＳｉＣ／ＭｏＳｉ＿２复合材料的相对密度为９６．４５％。检测了烧结体的微观结构及力学性能，并进行了讨论。
Reaction-bonding silicon carbide by infiltrating alloyed silicon melts into carbonaceous preforms was studied. MoSi_2 is used as a secondary refractory phase instead of residual silicon in RB-SiC. The best sinter ing temperature (1650℃) is lower than the temperature used in RB-SiC. The relative density of the SiC/MoSi_2 compopsite is 94.45% of theorectical density,the microstructure features and the mechanical behavior are also discussed.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1996年第3期347-351,共5页
Journal of The Chinese Ceramic Society
关键词
碳化硅
二硅化钼
烧成
浸渗反应
陶瓷
s:silicon carbide
molybdenum silicide
infiltration,sintering
