摘要
以超高纯Ｔｅ 和重复区熔法获得的超高纯Ｃｄ 为原料，用改进的气相物理输运法制备了高质量的ＣｄＴｅ单晶．改进的ＰＶＴ 有效地抑制了生长安瓶封装时产生的原料氧化和沾污，提高了生长速率和稳定性．利用电子回旋共振，光致发光等方法的测试结果表明，所获得的高品位ＣｄＴｅ单晶的中性施主杂质浓度仅为５×１４１４ｃｍ － ３，４．２Ｋ 下电子回旋迁移率高达２．５×１０５ｃｍ ２／（Ｖ·ｓ）．
Using superhigh purity Cd obtained by overlap zone melting from commercial 6N Cd,high quality CdTe single crystals are grown by improved physical vapor transport with a Cd reservoir to control the partial pressure and the stoichimetry of the crystals.The growth rate and reproducibility are much bettered.As\|grown crystals are evaluated with cyclotron resonance,photoluminescence and infrared transmittance.The 4 2K electron mobility is as high as 2 5×10 5cm\+2/(V·s),the highest reported value.
