摘要
对ＩｎＳｂ单晶、ＨｇＣｄＴｅ单晶、硅光电池三种半导体材料，利用积分球测量了在连续波ＹＡＧ激光（功率３Ｗ）辐照下，材料的热耦合系数．结果表明，材料的表面缺陷将增强对入射激光的热耦合．
Using the integrating sphere, we measured the thermal coupling coefficients of three kinds of semiconductor materials to CW YAG laser (the power of it is about 3 watt). Compared with the calculating values by the classical theory under ideal condition, the experimental values were a bit bigger. The qualitative analysis to this difference was presented. The results show that the surface defect of the materials will enhance the thermal coupling to the incident laser radiation.
出处
《应用激光》
CSCD
北大核心
1995年第4期167-168,共2页
Applied Laser
