摘要
介绍了一种高性能CMOS带隙基准电压源及电流源电路,基准电压源使用两个二极管串联结构来减小运放失调影响结果的系数,同时采用大尺寸器件减小运放的失调;采用共源共栅电流镜提供偏置电流来减小沟道长度调制效应带来的影响;在此基准电压源的基础上,利用正温度系数电流与负温度系数电流求和补偿的方法,设计了一种基准电流源。使用CSMC公司0.5μm CMOS工艺模型,利用Spectre工具对其仿真,结果显示:电源电压为5 V,在-40～85℃的温度范围内,基准电压源温度系数为20.4×10-6/℃,直流电源抑制比为1.9 mV/V,电流源温度系数为27.3×10-6/℃,电源抑制比为57 dB。
The super performance CMOS bandgap voltage reference and current reference were described.In order to reduce the influence of distortion voltage of ope rational amplifier,two-pn series-connection structure and large size devices were used.A cascode current mirror was used to produce the bias current,the errors resulted from the effect of the channel length modulation of PMOS were reduced.On the base of the voltage reference,a current reference was presented by adding a positive temperature coefficient current and a negative temperature coefficient.The circuit was fabricated by CSMC 0.5 μm CMOS technology,the Spectre simulation results show that voltage reference has a temperature coefficient of 20.4 ×10-6 /℃ from-40 ℃ to 85 ℃ when the power supply voltage is 5 V and a line regulation is 1.9 mV/V.The current reference has a temperature coefficient of 27.3×10-6/℃ with a PSRR of 57 dB.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第3期229-233,共5页
Semiconductor Technology
基金
上海市科委国际科技合作项目资助(09530708500)
