摘要
基于新型的低压与温度成正比(PTAT)基准源和PMOS衬底驱动低压运算放大器技术,采用分段温度计译码结构设计了一种1.5V8位100MS/s电流舵D/A转换器,工艺为TSMC0.25μm2P5MCMOS。当采样频率为100MHz,输出频率为20MHz时,SFDR为69.5dB,D/A转换器的微分非线性误差(DNL)和积分非线性误差(INL)的典型值分别为0.32LSB和0.52LSB。整个D/A转换器的版图面积为0.75mm×0.85mm,非常适合SOC的嵌入式应用。
Based on the low voltage PTAT reference and PMOS bulk-driven low voltage operational amplifier, a 1.5 V 8-bit 100 MS/s segmented CMOS current-steering D/A converter in a 0. 25 μm, TSMC 2P5M CMOS process is implemented. Spurious-free dynamic range(SFDR) is 69.5 dB at the 100 MS/s clock rate and the 20 MHz output frequency. The DNL of 8-bit DAC is 0.32 LSB, and INL is 0.52 LSB. The active layout area of D/A converter is about 0.75 mm×0. 85 mm. The D/A converter is very suitable for SOC embedded application.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第3期394-398,共5页
Research & Progress of SSE
基金
国家自然科学基金(60476046)
国家部委基金(51408010304DZ0140)资助