摘要
PbI2单晶体是性能优异的室温半导体核辐射探测器新材料。主要介绍了PbI2晶体生长技术及其室温核辐射探测器研究发展的最新动态,综述了PbI2晶体的3种主要生长方法(气相法、熔体法和凝胶法)的原理和优缺点,重点阐述了熔体法生长PbI2晶体的影响因素及研究进展,提出了PbI2单晶制备技术存在的主要问题和今后的发展方向。
PbI2 single crystal is a new semiconductor material with excellent properties in room-temperature nuclear radiation detectors. The development process and recent trends of PbI2 single crystal growth technology and room-temperature nuclear radiation detection are introduced. The main growth methods of Phi2 single crystal, including vapour phase growth, melt method and gel method, are summarized. The principles as well as the advantages and disadvantages of these methods are expatiated. The influence factors and recent advances of PhI2 single crystal growth by melt method are discussed particularly, Some existing problems and possible future developments are also proposed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2011年第1期80-83,93,共5页
Materials Reports
基金
四川省科技厅基金(2010ZR0123)
中国民用航空飞行学院科研基金项目(J2009-81)
关键词
碘化铅晶体
室温核辐射探测器
生长技术
垂直布里奇曼法
VBM PbI2 single crystal, room-temperature nuclear radiation detection, crystal growth technology VBM
