摘要
报道了CdZnTe探测器晶片表面钝化工艺对其性能的影响。先采用金相砂纸和化学腐蚀剂对CdZnTe晶片进行机械和化学抛光，然后分别用H2O2溶液和NH4F／H2O2溶液对晶片进行湿法钝化；再用ZC36微电流测试仪和扫描电镜测试研究了不同钝化时间对CdZnTe晶片电学性质和表面形态的影响。结果发现：用NH4F／H2O2溶液对CdZnTe探测器晶片进行钝化30min，晶片表面形成一层完整的高阻氧化层，表面漏电流最小、晶体电阻率提高1-2个数量级，达到10^9-10 Ω·cm，适合探测器的制备。
The influences of surface passivation process on the properties of the wafers for CdZnTe（CZT） detector were reported. Firstly, the CZT wafers were polished mechanically and chemically by means of metallographic abrasive papers and chemical etchant. Then the wafers were passivated respectively by H2O2 solution and NH4F/H2O2 solution. By using micro-current test instrument and scanning electron microscopy （ SEM）, the influences of different passivation time on the electronic properties of the wafers were studied. It was found that when CZT wafers were passivated 30 minutes with NHgF/H2O2 solution, there formed a high resistivity layer of oxide on the surface. The 1 eakage current of the surface is the lowest, resistivity of the crystal heightened for 1-2 order of magnitude, can be used for the preparation of CZT detectors. up to 10^9-10 Ω·cm. The wafers can be used for the preparation of CZT detectors.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第4期715-718,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.60276030)资助项目
关键词
碲锌镉晶片
表面处理
漏电流
电阻率
形貌
CdZnTe wafer
surface treatment
leakage current
resistivity
morphology
