期刊文献+

机械力诱导自蔓延法制备CuInSe_2光伏材料 被引量:1

CuInSe_2 PHOTOVOTAIC MATERIAL SYNTHESIZED BY MECHANICALLY INDUCED SELF-PROGATING REACTIONS
原文传递
导出
摘要 将Cu、In、Se单质粉末研磨制备了黄铜矿型的CuInSe_2(CIS)多晶粉末。研磨过程中冒出红色烟雾,发生了机械力诱导自蔓延反应(MSR)。通过实时温度监测,发现研磨初期温度变化不明显;发生反应时,温度迅速升高。讨论了MSR法制备CIS光伏材料的反应机理,并用SEM、EDS、XRD和TEM对制备的粉末进行了表征,观察和分析了样品的表面形貌、成分和组织结构。结果表明,粉末样品的颗粒尺寸小于15μm,产物为富铜的黄铜矿型CuInSe_2化合物,且为多晶态。 CulnSe2 (CIS) powders were synthesized by mechanically induced self-propagating reactions (MSR) with Cu, In and Se. The thermoelectric couple was used to detect the temperature change during the grinding process. The results showed that during the initial grinding period, the temperature rise slightly. The temperature rose rapidly after the reaction ignited. The reaction mechanism of the preparation of CIS ternary compounds by the MSR was discussed. The products were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and transmission electron microscope (TEM). Morphologies, compositions, and miemstmctures of the prod- ucts were observed and analyzed. The results indicated that the particle size is less than 15μm and the obtained powders are Cu-rich CulnSe2 with chaleopyrite-type structure. Characteristic peaks of the chalcopyrite-type structure such as (103) and (211) were clearly observed. The TEM analysis indicated that the products are polycrystalline.
出处 《太阳能学报》 EI CAS CSCD 北大核心 2010年第11期1408-1412,共5页 Acta Energiae Solaris Sinica
关键词 机械力诱导自蔓延反应 CulnSe2 光伏材料 mechanically induced self-propagating reactions CulnSe2 photovohaic material
  • 相关文献

参考文献3

二级参考文献45

  • 1刘志光.'94秋季材料研讨会论文集(Ⅳ)[M].-,1994.346.
  • 2[1]Shukri Z A, Champness C H. Effect of nonstoichiometry on conductivity type in Bridgman-grown CuInSe2 [J]. Journal of Crystal Growth, 1998, 191(1-2): 97.
  • 3[2]Stallworth P E. NMR studies of CuInS2 and CuInSe2 crystals grown by the Bridgman method[J].Solid State Communications, 2000, 113(9):527.
  • 4[3]Wang H P, Shih I, Champness C H. Studies on monocrystalline CuInSe2 and CuIn3Se5[J]. Thin Solid Films, 2000, 361-362(1):494.
  • 5[4]Matsushita H, Taakizawa T. Studies on monocrystalline CuInse2 and CuIn3Se5[J]. Journal of Crystal Growth , 1997,179: 503.
  • 6[5]Eisener B, Wolf D, Müller G. Influence of sulphur on the electrical and optical properties of p-type CuIn (SxSe1-x)2 single crystals[J]. Thin Solid Films, 2000, 361-362(1): 126.
  • 7[6]Senthil K, Nataraj D. Conduction studies on copper indium diselenide thin films[J]. Materials Chemistry and Physics,1999, 58(3):221.
  • 8[7]AstanedaS I C, Rueda F. Differences in copper indium selenide films obtained by electron beam and flash evaporation [J].Thin Solid Films, 2000, 361-362: 145.
  • 9[8]Katsui A, Iwata T. In-situ observation of CuInSe2 formation process using high-temperature X-ray diffraction analysis[J].Thin Solid Films, 1999, 347(1-2):151.
  • 10[9]Zweigart S, Schmid D, Kessler J. Studies of the growth mechanism of polycrystalline CuInSe2 thin films prepared by a sequential process[J]. Journal of Crystal Growth, 1995, 146(1-4): 233.

共引文献23

同被引文献5

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部