摘要
建立了ａ－ＳｉＴＦＴＡＭＬＣＤ的等效电路模型，综合考虑栅信号线电阻、栅与源信号线的交叠电容以及ＴＦＴ导电沟道电容构成的ＲＣ（ＲｅｓｉｓｔｉｖｉｔｙＣａｐａｃｉｔａｎｃｅ）常数，模拟计算了栅信号延迟对液晶显示屏尺寸、显示分辨率及栅信号电极材料的依赖关系，为实现器件优化设计提供参考。
An equivalent RC circuit of unit pixel was developed for the simulation of gate delay in a Si TFT AMLCD in order to optimize the designment of devices The RC factor is supposed to be contributed by the resistance of gate line,the crossover capacitance and the channel capacitance The simulation presents the gate delay as a function of diagonal size and display resolution, regarding gate electrode made from various metal materials
出处
《液晶与显示》
CAS
CSCD
1999年第2期121-125,共5页
Chinese Journal of Liquid Crystals and Displays
基金
中国科学院院长基金
中国科学院留学归国基金
