摘要
优化设计了既能实现较小垂直方向远场发散角，又能降低腔面光功率密度的ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变层量子阱激光器，并计算了该结构激光器实现基横模工作的脊形波导结构参数。利用分子束外延生长了ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器材料并研制出基横模输出功率大于１４０ｍＷ，激射波长为９８０ｎｍ的脊形波导应变量子阱激光器，其微分量子效率为０．８Ｗ／Ａ，垂直和平行结平面方向远场发散角分别为２８°和６．
InGaAs/GaAs/AlGaAs strained layer quantum well lasers with a small vertical divergence angle and low light power density are designed; and ridge waveguide parameters resulting in fundamental transverse mode operation are calculated. The InGaAs/GaAs/AlGaAs strained layer quantum well lasers were grown by molecular beam epitaxy. Ridge waveguide InGaAs/GaAs/AlGaAs strained layer quantum well lasers operating in the fundamental transverse mode up to 140 mW at a wavelength of 980 nm were fabricated. The lasers exhibit a differential quantum efficiency of 0.8W/A, a vertical divergence angle of 28° and a parallel divergence angle of 6.8°.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1999年第5期390-394,共5页
Chinese Journal of Lasers
关键词
高质量光束
基横模
半导体激光器
应变量子阱
high quality beam, high power, fundamental transverse mode, molecular beam epitaxy
