摘要
本文报道了GaAs/GaAlAs材料低阈值掩埋异质结(BH)半导体激光器的研究成果。利用液相外延技术对一次外延生长双异质结构激光器,二次外延生长掩埋异质结构激光器进行了十分系统的工艺实验。通过结构设计的优化和工艺技术的改进与完善,达到了预期的极低阈值的结果。一次外延的宽接触阈值电流密度一般均低于1000A/cm^2,最低达675A/cm^2,经过二次外延的掩埋制作,器件的阈值电流低于10mA,最低可达4mA。这是国内报道的同类激光器最好水平。
The study on the low threshold GaAs/GaAlAs BH lasers is reported.Taking advantageof the LPE system, the LPE growth DH wafer and the LPE regrowth BH wafer were performed.By the optimization of the structure design and the improvement of process technique,the expected performance of low threshold current was achieved.The broad areathreshold current density of DH wafer is generally is the range of 800-1000A/cm^2, and thelouest is 675A/cm^2. After the LPE regrowth, the threshold current is lower than 10mA, andthe lowest is 4mA. To our knowledge, this is one of the lowest threshold of double heterostrueturelaser diode reported by now.
关键词
半导体激光器
异质结构
掩埋
Epitaxial growth
Semiconducting aluminum compounds
Semiconducting gallium compounds
