摘要
本文从理论上分析了实现 In Ga As/Ga As/Al Ga As应变量子阱激光器高光功率转换效率、高输出功率的有效途径 ,并优化了器件结构 ,可以同时获得低的腔面光功率密度和小的垂直于结平面远场发散角 .利用分子束外延生长构成了高质量 In Ga As/Ga As/Al Ga As应变量子阱激光器 ,其最高光功率转换效率为 53%、最大输出功率为 3.7W,垂直于结平面方向远场发散角为
We analyzed the effective method to realize high power conversion efficiency and high output power InGaAs/GaAs/AlGaAs strained layer quantum well lasers and optimized its structure. In this structure, we can achieve low light power density in mirror and small divergence angle in vertical direction to junction plane. High quality InGaAs/GaAs/AlGaAs strained layer quantum well lasers were grown by MBE, its maximum power conversion efficiency is 53%, the maximum output power is 3 7W, the divergence angle in vertical direction to junction plane is 30°.
关键词
应变量子阱
激光器
MEB生长
设计
Semiconducting gallium arsenide
Semiconductor quantum wells
