摘要
对氧化物条型ＧａＡｓ／ＧａＡｌＡｓ大功率量子阱激光器的电导数曲线及其参数与器件可靠性之间的相关性进行了讨论，指出ｍ，ｈ，ｂ参数可以评价器件质量和可靠性。实验结果表明电导数测试是大功率半导体激光器快速筛选的新方法。
In this paper, the relationships between the device reliability and the electrical derivative curves and the electrical derivative parameters of oxide stripe structure GaAs/GaAlAs high power quantum well semiconductor lasers are discussed. Then it is pointed out that the quality and the reliability of the devices can be evaluated by electrical derivative parameters (m, h, b). In short, the electrical derivative measurement can be applied to screen high power semiconductor lasers rapidly.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1999年第6期507-510,共4页
Chinese Journal of Lasers
基金
集成光电子国家重点联合实验室中国科学院半导体所实验区和吉林省科委资助项目
