摘要
按照电化学原理分析硅片化学腐蚀过程，阐述了择优与非择优腐蚀的机理，研究了一套硅片化腐新工艺。这些工艺在电力半导体器件生产中得到了成功的应用。
The chemical corrosion process is analyzed,and preferred orientation and no
preferred orientation corrosion mecharism of silicon wafer were discussed according to
electrochemistry principle.A set of new technologies of chemical corrosion was improved by using
micro corrosion cleaning of silicon wafer. The chemical corrosion was found successfully aplied
to producting power semiconducdor devices.
出处
《电力电子技术》
CSCD
北大核心
1999年第3期48-50,共3页
Power Electronics
关键词
硅片
化学腐蚀
电力半导体器件
silicon wafer
chemical corrosion
power
semiconductor device
