摘要
重点对绝缘门双极晶体管（ＩＧＢＴ）的极限电流与极限功耗进行了研究。在ＩＧＢＴ输出特性上，过电流状态下，因其功耗过大引起温度升高导致热击穿以及在过电流时由于ＩＧＢＴ导通时间延长引起的热击穿都可造成ＩＧＢＴ损坏。文章从器件模型理论出发，阐述了ＩＧＢＴ损坏前的两种极限参数：过电流时极限能耗参数Ｅｄｍａｘ＝∫ｔｍａｘ０ｉＡ（ｔ）ｕｃｅ（ｔ）ｄｔ及过电流时在输出特性上通态功耗极限参数ＰＭ。
This paper emphasizes the research on IGBT limiting current and on state limiting power loss .On the output characteristics of IGBT under over current, when energy or power loss exceeds the limiting temperature will rise. When junction temperature exceeds allowed maximum junction temperature ,IGBT will be destructed owing to thermo breakdown .These have been analyzed theorically through IGBT on state model. It puts forward two kinds of limiting parameters before IGBT destruction: limiting energy parameter under IGBT over current E d max =∫ t max 0i A(t)u ce (t) d t and limiting power loss parameter P M on the output characteristics of IGBT.
出处
《中国电机工程学报》
EI
CSCD
北大核心
1999年第6期47-51,共5页
Proceedings of the CSEE
基金
国家自然科学基金
关键词
IGBT
极限电流
极限功耗
双极性晶体管
IGBT
limiting current
limiting power loss
nondestructive testing
