摘要
在玻璃基底和四种硅基底上用反应式直流磁控溅射法制备了ZnO薄膜．用AES和XRD对薄膜结构和组分进行测试，结果表明，五种基底上生长的ZnO薄膜在不同程度上都具有优良的纵向均匀性、明显的c轴择优取向和较高的结晶度，而硅基底上薄膜的结构普遍优于玻璃基底上沉积的薄膜。
Reactive d.c. magnetron sputtering was adopted to prepare ZnO thin films on glass and four kinds of Si substrates. Structural properties were then valued by AES and XRD to show that these ZnO films were homogeneous in vertical section, with high crystallinity, and had a preferred orientation with the c axis normal to the substrate surface. Moreover, the structural properties of ZnO films deposited on Si substrates were generally better than that of ZnO films on glass.
出处
《功能材料与器件学报》
CAS
CSCD
1999年第1期66-70,共5页
Journal of Functional Materials and Devices
