摘要
本文研究了经直流磁控溅射制备的TiN/GaAs肖特基结的电学特性.给出了不同退火温度下I-V,C-V测量结果及TiN/GaAs与Au/GaAs,Ti/GaAs,Al/GaAs接触特性的比较.应用AES与XPS进行肖特基结的表面和界面剖析,发现退火过程中TiN膜的氧化,N在TiN膜中的再分布及TiN-GaAs接触界面上的化学重组对肖特基结的接触特性有重要影响.
This paper deals with the study on electrical characteristics of TiN/ GaAs Schottky diodes prepared by D.C. magnetron reactive sputtering. I-V, C-V measurements and the contact behavior of this diode compared with Au/GaAs, Ti/ GaAs, A1/GaAs subjected to various annealing conditions are given. AES and XPS analyses provide depth profile of the diodes, which shows the information of composition changes. The results indicated that the oxidization of TiN film, the redistribution of N in the film, as well as the chemical recombination on TiN/GaAs interface during annealing procedure exert a great influence on the contact characteris tics.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第1期28-33,共6页
Research & Progress of SSE
