摘要
采用管壳内匹配及外电路匹配相结合的方法,成功制作四胞合成大功率高增益SiCMESFET。优化了芯片装配形式,采用内匹配技术提高了器件输入、输出阻抗。优化了测试电路结构,成功消除了输入信号对栅极偏置电压的影响,提高了电路稳定性。四胞器件在脉宽为300μs、占空比为10%脉冲测试时,2 GHzVds=50 V脉冲输出功率为129 W(51.1 dBm),线性增益为13.0 dB,功率附加效率为31.4%。
High power SiC MESFETs with internally-matched circuits was fabricated.The impendence was increased by using the internally-matched circuit.The test circuit was optimized to eliminate the effect which the input signal has on the Vgs.The device with 20 mm×4 gate-width shows a pulsed output power of 129 W（51.1 dBm）with a linear gain of 13.0 dB and a power added efficiency of 31.4% at 2 GHz Vds=50 V and pulsed condition of 300 μs pulse width,10% duty cycle.These are the significant results up to now in China.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第7期658-660,668,共4页
Semiconductor Technology
基金
重点实验室基金(914A08050509D223)
