摘要
4H-SiC MESFETs are fabricated on semi-insulating SiC substrates. Key processes are optimized to obtain better device performance. A microwave power amplifier is demonstrated from a 1mm SiC MESFET for S band operation. When operated at a drain voltage of 64V, the amplifier shows an output power of 4.09W, a gain of 9.3dB,and a power added efficiency of 31.3%.
利用本实验室生长的4H-SiC外延材料开展了SiC微波功率器件的研究.通过对欧姆接触和干法刻槽工艺的优化,研制出高性能的SiCMESFET.利用1mm栅宽SiCMESFET制成的微波功率放大器在2GHz64V工作时,连续波输出功率达4·09W,功率增益为9·3dB,PAE为31·3%.文中还给出了SiC功率放大器在微波大信号工作时的稳定性的初步测试结果.
