摘要
碳化硅(SiC)是第三代半导体材料的典型代表,也是目前晶体生长技术和器件制造水平最成熟、应用最广泛的宽禁带半导体材料之一,是高温、高频、抗辐照、大功率应用场合下极为理想的半导体材料。文章结合美国国防先进研究计划局DARPA的高功率电子器件应用宽禁带技术HPE项目的发展,介绍了SiC功率器件的最新进展及其面临的挑战和发展前景。同时对我国宽禁带半导体SiC器件的研究现状及未来的发展方向做了概述与展望。
Silicon carbide（SiC） is a typical material for the 3rd generation semiconductor. It is also one of the most widely-used and the best types of material for the production of wide band-gap semiconductors, largely due to advancement in crystal growth technology, and the material＇s high tolerance in terms of temperature, frequency, radioactivity, and power output. The latest development in SiC power device, the challenges and the future perspectives involved, and relates the description to the research in the state-of-the-art DARPA Wide Band-gap Semiconductor Technology （WBST） and the High Power Electronics （HPE） program are all described in this paper. Recent advances and the future perspective of SiC devices in China are also addressed.
出处
《中国电子科学研究院学报》
2009年第2期111-118,共8页
Journal of China Academy of Electronics and Information Technology
