摘要
应用CH4/H2/Ar作为刻蚀气源对InSb微台面阵列进行了反应离子刻蚀,并对刻蚀后引入的损伤进行了分析。实验证实利用干法刻蚀与湿法腐蚀相结合的方法能有效地减少刻蚀引入的缺陷和损伤,获得较好的电学特性,达到低损伤刻蚀InSb材料的目的。
In this work, we use reactive ion etching（RIE） for fabricating InSb mesa with CH4/Hz/Ar plasma. We report on etch-induced damage in InSb caused by plasma, and a method for its reduction by means of wet etching. A postwet etching of the dry-etched samples effectively reduced the etch-induced defects and damage,leading to improved electrical properties in the etched InSb mesa.
出处
《激光与红外》
CAS
CSCD
北大核心
2010年第6期622-624,共3页
Laser & Infrared
关键词
反应离子刻蚀
INSB
刻蚀损伤
I-V曲线
reactive ion etching（RIE）
InSb
etching damage
current-voltage characteristic
