期刊文献+

百万门系统级芯片的后端设计 被引量:2

A Back-end Design Process for SoC
在线阅读 下载PDF
导出
摘要 采用0.18μm及以下工艺设计高性能的VLSI芯片面临着诸多挑战,如特征尺寸缩小带来的互联线效应、信号完整性对芯片时序带来的影响、时序收敛因为多个设计变量的相互信赖而变得相当复杂,使百万门级芯片版图设计师需深入物理设计,选用有效EDA工具,结合电路特点开发有针对性的后端设计流程。文章介绍了采用Synopsys公司Astro后端工具对一款百万门级、基于0.18μm工艺SoC芯片后端设计的过程,分为后端设计前的数据准备、布局规划、电源设计、单元放置及优化、时钟树综合、布线等几个阶段进行了重点介绍。同时考虑到深亚微米工艺下的互联线效应,介绍了如何预防串扰问题以及在整个布局布线过程中如何保证芯片的时序能够满足设计要求。 Using 0.18 um and below technologies at high-performance VLS1 chips is facing many challenges. Such as interconnect line effect by feature size shrink, the impact of timing from the signal integrity, and the timing complicated because the interdependence of many design variable. So designers have to be deeply involved in physical design, use effective EDA tools, and have to develop the back-end design flow. This paper introduces the back-end physical design process of a SoC based on a tool named Astro of Synopsys, and the layout is displayed and taped out in SMIC 0.18 um CMOS process. This design is divided into data preparation, floor plan, cell placement, clock tree synthesis, routing and so on. Considering the interconnect effect of the deep sub-micron process, this paper describes how to prevent crosstalk, and how to ensure the chip timing to meet the design requirement through the whole back-end design.
作者 张玲 罗静
出处 《电子与封装》 2010年第5期25-29,共5页 Electronics & Packaging
关键词 时钟树 串扰 时序分析 时序优化 clock-tree crosstalk time-analysis time-optimization
  • 相关文献

参考文献4

  • 1陈春章,艾霞,王国雄.数字集成电路物理设计[M].北京:科学出版社,2005.
  • 2Weste NHE, Harris D. CMOS VLSI Design: A Circuit and Systems Perspective[M]. 2005.
  • 3Wang Donghui, Yu Qian, Hong Ying, et al. SuperV Back-End Design Flow Based on Astro[J].IEEE, 2005.
  • 4Synopsys User Manual[S].Astro User Guide.

共引文献2

同被引文献6

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部