摘要
在 GaSb 衬底上用过冷却技术在550℃的饱和温度下生长了晶格匹配的AlGaSb 外延层。用金相显微镜测量了外延层的厚度并观察了形貌。用 X 射线双晶衍射和低温光致发光技术分别测量了材料的晶格常数和禁带宽度,并因此确定了外延层的组分。
The lattice matched AlGaSb epilayer has been grown on GaSb sub strate by using cvercooling technique at saturation temperature of 550℃.The thick ness of the epilayer was measured using metallograph and the morphology ob served.The lattic parameters and the band gap were measured utilizing X-ray bi morph diffraction and low temperature photoluminescence respectively,so as to de- termine the composition of the epilayer.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期189-191,共3页
Semiconductor Optoelectronics
