摘要
采用CSMC0.5μm CMOS工艺设计了一种PFM调制DC-DC升压电路,重点分析了基准电压源、比较器、PFM控制电路和过流保护电路.仿真结果表明,该电路具有低电压启动、输出电压精度高、功耗低和过流保护功能等优点.基于0.5μm双层多晶硅三层金属双阱CMOS工艺的几何设计规则实现了其版图.
A design of PFM boost DC-DC converter in CSMC 0.5μm CMOS technology is described. The critical parts such as the reference generation, comparator, PFM controlled circuit and over-current protected circuit are analyzed. The simulation results show that it has advantages of low voltage start, high accuracy of ouput voltage, low power dissipation and over-current protection. According to a standard 0.5μm DPTM double wells CMOS process topological design rule of CSMC,the layout of the proposed circuit is realized.
出处
《微电子学与计算机》
CSCD
北大核心
2010年第5期27-30,共4页
Microelectronics & Computer
基金
江苏省高校自然科学基金项目(07KJB510091)
南通大学自然科学基金项目(05Z040
06Z035)
关键词
PFM调制
基准电压
振荡器
pulse frequency modulation
voltage reference
oscillator
