摘要
在对传统CMOS带隙电压基准源电路分析和总结的基础上,综合一级温度补偿、电流反馈和电阻二次分压技术,提出了一种10-ppm/oC低压CMOS带隙电压基准源。采用差分放大器作为基准源的负反馈运放,简化了电路的设计,放大器的输出用于产生自身的电流源偏置,提高了电源抑制比(PSRR)。整个电路采用TSMC 0.35mm CMOS工艺实现,采用Hspice进行仿真,仿真结果证明了基准源具有低温度系数和高电源抑制比。
The design of a 10-ppm/oC CMOS band-gap voltage reference with low power supply voltage in temperature compensation, current compensation and resistive subdivision technology is described. The amplifier for band-gap reference minus-feedback application is one stage differential amplifier. The biasing of the amplifier is derived from the output voltage, leading to a high power supply rejection (PSRR). The band-gap references is implemented in a standard 0.35m CMOS process leading to an output voltage of about 780mV. Simulation results using Hspice tools show that the low temperature coefficient and high PSRR of the proposed band-gap reference are ensured.
出处
《电路与系统学报》
CSCD
2004年第4期118-120,128,共4页
Journal of Circuits and Systems
基金
国家高技术研究发展863计划资助项目(2002AA1Z1210)
