摘要
本文基于0.5μm 5V DPTM CMOS工艺设计了一款用于LED驱动芯片的衬底电位选择电路。该电路采用峰值电流镜作为偏置,使其在低电压下能够正常工作,并运用源端输入带正反馈的比较器,使得电路具有一定的迟滞和高的转换速率,最后巧妙的设计了输出级,使输出结果尽可能的与芯片中的最高电压相等。仿真结果显示,比较器的转换速率为55.7V/μs,并且具有0.2V的迟滞,满足设计要求。
Based on the 0.5 μ m 5V DPTM CMOS process, a substrate voltage select circuit for LED driver chip is presented in this paper. The proposed circuit,which based on peak current mirror and source input comparator with forward feedback, makes the circuit can operate under low voltage and has a high slew rate besides a definite hysteresis. In order to the output matches to the maximal voltage in the chip, a special output stage is designed. The simulation results of comparator show that a slew rate of 55.7V/μs and a hysteresis of 0.2V is achieved .
出处
《中国集成电路》
2008年第12期40-43,51,共5页
China lntegrated Circuit
关键词
衬底电位选择
峰值电流镜
高转换速率
迟滞
Substrate Voltage Select
Peak Current Mirror
High Slew Rate
Hysteresis
