摘要
阐述了利用离子束刻蚀技术制作微光学阵列元件的工艺条件．研究和实验结果表明，通过光刻热熔法制作的光致抗蚀剂掩模图形经具有不同能量的离子束刻蚀后可以有效地实现向衬底材料上所作的选择性转移，所作的理论分析结果为非球面微光学阵列元件的制作提供了一条可行的技术途径．
The fabricating conditions for micro optics device are discussed etched by Ar ion beam. The results of experiment and theoretical analysis show that the photoresist pattern prepared by the photolighography and melting method can be transformed into the substrate effectively by ion beam milling with different etching energy. The theoretical results can be applied to fabricating non shape surface micro optics arrays device.
出处
《华中理工大学学报》
CSCD
北大核心
1998年第A02期1-3,共3页
Journal of Huazhong University of Science and Technology
