摘要
氮化镓(GaN)作为新一代半导体材料,具有高功率容量和高热容性等特点,所以GaN微波功率器件成为近几年研究的热点。随着GaN功放管的功率不断提高,以氮化镓(GaN)为基础的微波功率器件的应用取得了很大的进步。本文对氮化镓(GaN)功率器件的特点和现状进行了介绍,并对X波段50W GaN功放管的电路设计、影响电路的因素进行了分析和研究。最后完成了一个X波段50W固态功放的设计,并给出了测试结果。
Gallium nitride （GaN）, as a new generation of semiconductor materials, features high power capacity and heat capacitive characteristics; GaN microwave power devices become a research hotspot in recent years. With power increasing of the GaN power amplifier, the application of the GaN microwave power devices have made a great progress. In this paper, characteristics and development state of the GaN power device are introduced, and circuit design of X-band 50W GaN power amplifiers and the factors which affect the circuit are analyzed and researched. Finally, an X-band 50W solid-state power amplifier is designed, and the test results are given.
出处
《火控雷达技术》
2010年第1期70-73,共4页
Fire Control Radar Technology
