摘要
讨论了栅氧化层击穿的统计模型,并对业界广泛应用的1/E模型、E模型以及幂指数模型中栅氧化层击穿的物理机理进行了仔细研究,指出了各个模型应用的局限性,结合实验数据分析,明确给出了各个模型的应用范围。详细讨论了电场加速因子与激活能在三个模型中的不同物理含义,总结了电场加速因子、激活能随着栅氧化层厚度变化的发展趋势以及所对应的击穿机理,据此提出了通过激活能与电场加速因子选择和验证所用加速模型是否合理的方法。此方法为判断测试条件是否合理,分析测试结果的内在含义提供了更直接、有用的参考信息。
For gate oxide breakdown, statistical models were discussed, and the associated mechanisms in three commonly used models 1/E, E, and power-law were studied. The limitations for each model were also pointed out. Based on the abundant test data, the applicable areas for each model were clearly provided. For different gate oxide thickness, the trend on the energy were given, whose physical implications in the electric-field acceleration factor and on the activation three models were illustrated. Moreover, by the trend analysis on the activation energy and the electric-field acceleration factor, a way to determine the feasibility of the acceleration model were proposed. Meanwhile, the proposed method provides useful guidelines to better define test conditions and interpret test results.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第2期154-158,共5页
Semiconductor Technology
