摘要
描述了掺氧族离子（Ｏ２－，Ｓ２－，Ｓｅ２－）ＮａＣｌ晶体中（Ｆ＋２）Ｈ心的制备过程，报道了氧族离子稳定的（Ｆ＋２）Ｈ心的吸收光谱和发射光谱，测量了这些（Ｆ＋２）Ｈ心的室温避光稳定性。研究表明，氧族离子对Ｆ＋２心的稳定作用顺序为Ｏ２－＜Ｓｅ２－＜Ｓ２－，而受这三种离子扰动的（Ｆ＋２）Ｈ心的光谱峰位相对于纯Ｆ＋２心的移动大小亦为这一顺序。这一顺序与它们相应元素的电子亲合能顺序相同（分别为１．４７，２．０２，２．０７ｅＶ）。从而，纠正了根据离子大小为预测的结果Ｏ２－＜Ｓ２－＜Ｓｅ２－。本文结果对（Ｆ＋２）Ｈ色心激光晶体材料的研究具有指导意义。研究还表明，随着离子半经的增大，生长出优质的掺杂晶体越来越困难。
The preparation procedures of ( F 2 +) H centers in chalcogenide ions doped NaCl crystals are described,absorption and emission spectra are studied. The stability of these centers in the dark at room temperature is also mearsured.It is revealed that the increase of the stabilized effect of chalcogenide ions on F 2 + centers is in the sequence of ions O 2- ,Se 2- ,S 2- and that the increase of the shift magnitude of spectral positions based on these defects comparing with pure F 2 + center is in the same sequence. The sequence is the same as the electron affinity sequence,While the electron affinity of the chalcogenide elements is 1.47,2.02,2.07eV,respectively.It is also experimentally found that with increase of the chalcogenide ion size,the growth of good quality doped crystal is achieved more difficultly.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1998年第1期105-108,共4页
Journal of Synthetic Crystals
