摘要
报道了掺硫ＮａＣｌ晶体（Ｆ＿２￣＋）＿Ｈ心的制备过程以及（Ｆ＿２￣＋）＿Ｈ心的室温避光稳定性。讨论了Ｓ２－对Ｆ＿２￣＋的稳定作用和（Ｐ＿２￣＋）Ｈ制备过程中的缺陷化学反应．研究表明．促使Ｆ３心热分解成Ｆ心和控制好转型光的辐照剂量是制备高浓度、高纯度（Ｆ＿２￣＋）＿Ｈ心材料的关键技术之一。
The preparation procedure of (F2+)H centers in sulfur-doped NaCl was describe,and the stability of (F2+)H centers in the dark at room temperature was also measured. This Paper discusses the stabilities of S2- on F2+ centers, the defect reaction during Process, and POints out that the concentration of F3 centers must be kept as lower as possible during quenching in order to obtain high concentration of (F2+)H centers. It is Proved that the transient absorption due to F2+ centers during light aggregation can not be absolutely avoided,and thus increases the no-laser-active loss. The exposure dosage during aggregation is one ofthe major controllable Paramaters to obtain a high qualitative crystal.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1996年第7期651-656,共6页
Chinese Journal of Lasers
基金
福建省自然科学基金
