摘要
利用真空蒸发的方法制备ZnTe多晶薄膜,并采用双源法对薄膜进行了稀土元素Pr的掺杂。用XRD、紫外可见分光光度仪、冷热探针对薄膜的性质进行了表征。结果表明,当原子配比Zn∶Te=1∶0.7,热处理温度T=500℃时,可制备较理想的ZnTe多晶薄膜。稀土Pr掺杂并未改变样品的物相结构,但使薄膜光吸收增大而光学带隙增大。
The ZnTe polycrystalline thin films were prepared by double-source vacuum evaporation on glass substrate with the RE element Pr doped. The optical properties of the films were characterized by visible ultraviolet spectropbotometry, XRD and cold/hot probe. The result showed that the optical properties of ZnTe thin films are best when Zn ：Te =1：0.7 and annealed at 500℃. As to the ＂Pr-doping effect, it doesn＇t change the phase structure of the film sample but increases its solar absorbency with optical band gap widened.
出处
《真空》
CAS
北大核心
2009年第6期55-58,共4页
Vacuum
