摘要
介绍了在SilvacoTCAD软件中最新加入的磷扩散模型──PERCO模型。该模型建立了杂质、空位及自间隙的连续性方程，描述了由于高浓度磷扩衡引起的超平衡点缺陷对磷在硅中分布的影响。已将该模型用于对实际工艺模拟的校正，取得满意的结果，同时，可以体会到模型校正的意义。
A new phosphorus diffusion model-PERCO model introduced intoSilyaco TCAD software is presented in this paper. This model solves the full systemo f impurity, vacancy, and self-interstitial continuity equations. It describes the behavior of phosphorus diffusion in silicon under the effects of non-equilibium pointdefects induced by high concentration phosphorus diffusion process. We used thismodel during calibration of process simulation and reached satisfying results. We also understood the meaning of model calibration more deeply form this work.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期334-339,共6页
Research & Progress of SSE
