摘要
针对电力半导体器件的特性和工艺特点,提出了一种适用于电力器件的磷扩散模型并应用MATHMATICA4对该模型进行计算,计算的结果与SUPREM IV.GS模拟软件在相同的工艺条件下得到的结果趋于一致.并且与实际扩散结果接近.此种方法为电力器件其他杂质的扩散工艺过程的模拟提供了一定指导作用.
This paper aims for power semiconductor devices' characteristics and technologic trait, puts forward a phosphorus diffusion model which applies to power semiconductor devices. We use MATHMATICAL4 to calculate this model. The results, under the same technologic conditions, adhere to the calculation results of simulation software SUPREM IV.GS and the results of real diffusion. This way plays a role in the simulation model of technologic process of other power semiconductor devices' dopants.
出处
《辽宁大学学报（自然科学版）》
CAS
2004年第4期358-362,共5页
Journal of Liaoning University：Natural Sciences Edition
基金
辽宁省自然科学基金资助项目(No..002021)
