摘要
数值分析结果表明,外加磁场可以改变熔融半导体中的流型,几千高斯的磁场可以显著地减小熔体的流动,但对温度场影响不大。
. Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number.
出处
《力学学报》
EI
CSCD
北大核心
1990年第1期74-78,共5页
Chinese Journal of Theoretical and Applied Mechanics
基金
国家自然科学基金
关键词
磁场
半导体
CZ法
拉晶
流动场
melt flow in GZ crystal growth, magnetic field effect, numerical simulation
