摘要
用共蒸发法沉积了ZnTe/ZnTe:Cu复合多晶薄膜,通过XRD,XPS,C-V,I-V等研究了沉积温度对薄膜结构、Cu浓度分布及电池性能的影响.结果表明,沉积温度对薄膜的结构影响不明显,薄膜呈立方相,经185℃退火后出现了六方相.对薄膜的剖析发现,Cu浓度分布呈现先上升到一极大值而后快速下降的趋势,100℃沉积的ZnTe/ZnTe:Cu薄膜,ZnTe层起到了阻止Cu扩散作用,用这种薄膜制作的太阳电池XD较大,电容较小,二极管特性较好,具有较高的转换效率.
Polycrystalline film of ZnTe/ZnTe： Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by X.RD, XPS, C- V and I- V analysis. The results indicate that, （1） the deposition temeperature has less effectort the structure of the film ZnTed ZnTc： Cu, （2） the fact that the Cu concentration in the film deposited at 100℃ raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier （ XD ）, smaller capacitance, better diode characteristic and larger convemion efficiency.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第7期4920-4924,共5页
Acta Physica Sinica
基金
国家高技术研究发展计划(863)(批准号:2003AA513010)
教育部博士点基金(批准号:20050610024)
四川省应用基础项目(批准号:2006J13-08)资助的课题~~
关键词
ZnTe多晶薄膜
沉积温度
薄膜结构
器件性能
polycrystalline ZnTe film, deposition temperature, structure of films, device performance
