摘要
用共蒸发法在室温下沉积了 Zn Te∶ Cu多晶薄膜 .刚沉积的不掺 Cu的薄膜呈立方相 ,适度掺 Cu时为立方相和六方相的混合相 .随着 Cu含量的增加 ,六方相增加 ,光能隙减小 .根据暗电导温度关系 ,结合 XRD和 DSC的结果 ,认为在 110℃、170℃开始出现类 Cu Te、类 Cu2 Te相以及 Cu0、Cu+离解的结果导致电导温度关系异常 ,应用这种薄膜作为背接触层获得了转换效率为 11.6 % ,面积为 0 .5 2 cm2 的 Cd S/Cd Te/Zn Te∶
ZnTe∶Cu polycrystalline films have been fabricated by vacuum co evaporation technology at room temperature.It shows that as deposited and undoped ZnTe films are of the cubic structure while properly Cu doped ZnTe films of the mixture of cubic structure and hexagonal structure.The hexagonal phase will increase but the optical energy gap decrease in ZnTe∶Cu films when the copper concentration increases.According to the dark conductivity temperature curves and the results from XRD and DSC,it's assumed similar CuTe and Cu\-2Te phase appear at 110℃ and 170℃ respectively.The abnormal conductivity temperature curves can be explained by the ionization of copper atoms and structure phase transition.Using Cu doped ZnTe as a back contact layer,the solar cells with structure of CdS/CdTe/ZnTe∶Cu have been fabricated with an efficiency of 11 6% for a cell size of 0 52cm 2.
基金
国家自然科学基金资助项目 !(No.5 672 0 3 6)&&
