摘要
用热丝CVD法，以甲烷和氢气为气源，制备出了优质的金刚石薄膜。研究了沉积工艺参数对金刚石薄膜形貌的影响。结果表明：降低碳源浓度或升高衬底温度，沉积的金刚石薄膜呈现以三角形为主的形貌；反之，沉积的金刚石薄膜则呈现以四方形为主的形貌。
Satisfactory diamond thin films have been synthesired by us on silicon substrate by HFCVD (hot filament chemical vapor .deposition) method in gas mixture of hydrogen and methane. The effects of substrate temperature and concentration of carbon source on micromorphology of diamond thin film were investigated. We found that substrate temperature should be in the range of 650~850℃and concentration of carbon source should be in the range of 0. 8%~1. 3%. Fig. 2 is for a carbon source of 1. 3% and shows the effect of temperature on mieromorphology of diamond thin film. The micromorphology for 850℃ (Fig. 2a) is triangular. The micromorphologies for 750℃ (Fig. 2b) and 650℃ (Fig. 2c) are both quadrangular. Both triangular and quadrangular morphologies indicate that the diamond thin films are of satisfactory quality. Fig. 4 is for a substrate temperature of 750℃ and shows the effect of concentration of carbon source on morphology. The morphology for a carbon concentration of 0. 8% is triangular.
出处
《西北工业大学学报》
EI
CAS
CSCD
北大核心
1998年第2期182-186,共5页
Journal of Northwestern Polytechnical University
关键词
金刚石薄膜
工艺参数
形貌
diamond thin film, mocromorphology, substrate temperature, concentration of carbon soure
