摘要
Si的可见光发射是半导体发光材料研究中的一个新课题。文中从能带工程的角度出发，着重讨论了SiGe应变层异质结、Si量子细线、Si纳米团簇以及Si－O化合物年维体系的可见光发射机理，并进而探讨了提高这些娃基低线材料发光效率的可能途径。
Visible light emission of silicon is a new subject in light emissionstudy of semiconductor materials. This paper introduces the mechanism of visiblelight emission of low dimensional materials such as SiGe strianed heterojunction,Siquantum wire, Si nanometer cluster and Si-O compound zero dimensional systembased on energy band engineering, and points out the approach to enhancing lightemission efficiency of these materials.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第2期146-151,共6页
Research & Progress of SSE
基金
河北省自然科学基金!595076
关键词
应变层异质结
量子细线
纳米团簇
硅
锗化硅
SiGe Strained Heterojunction
Si Quantum Wire
Si Nanometer Cluster
Si-O Compound Zero Dimesional System
Visible Light Emission
