摘要
报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。
The development results of a PHEMT monolithic low-noise amplifierfor X-band DBS use are described in this paper. The CAD method, including MBEmaterial, PHEMT device and monolithic circuit, has been discussed and the optimum design has been completed. The special technique in MMIC process has beendeveloped for LNA fabrication- Single-stage MMIC exhibits noise figure of lessthan 1. 8 dB wlth ga1n of more than 6. 8 dB in the frequency range of 11. 7 to 12. 2GHz. For dual stage MMIC, noise figure of less than 1. 96 dB with gain of morethan 15. 3 dB in the frequency range of 10. 4 t0 11.1 GHz is obtained. The minimum noise figure is 1. 63 dB and maximum gain is 16. 07 dB at 10. 4 GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第2期107-112,共6页
Research & Progress of SSE
