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射频溅射法制备硫化钨固体润滑薄膜的研究 被引量:6

Deposition of Tungsten Disulfide Films Grown by RF Magnetron Sputtering on Stainless Steel Substrates
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摘要 本文研究了采用射频溅射法以3Cr13马氏体不锈钢为基片制备硫化钨薄膜。实验分别采用了不同的溅射功率、工作气压和沉积时间来制备样品。之后对三组样品分别进行物相分析、表面形貌观察、测定微区化学成分、结合力和摩擦系数。结果表明:通过射频溅射法可获得非晶态WS2薄膜,薄膜的S/W比一般小于2,并受溅射工艺影响较为明显,随着溅射功率的升高逐渐降低,随着溅射时间的延长明显升高。薄膜结合力受溅射工艺影响并不显著。通过射频溅射所获得薄膜的摩擦系数在一定范围内与其硫钨比成反比。 The tungsten disulfide films were deposited by RF magnetron sputtering on 3Cr13 Martensitic stainless steel substrates. The microstructures, chemical compositions and mechanical properties were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and conventional mechanical probes. The influence of the fill deposition conditions, including the pressure, sputtering power, and deposition time, on its properties was studied. The resuhs show that the deposition conditions affect the mechanical properties of the amorphous WS2, with the stoichiometric ratio, S/W, less than 2. The ratio slowly decreases with an increase of the sputtering power; but increases with an increase of the sputtering time. The friction coefficient of the films was found to be inversely proportional to the S/W ratio in a certain range.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2009年第3期277-281,共5页 Chinese Journal of Vacuum Science and Technology
关键词 二硫化钨 射频溅射 溅射工艺 化学成分 摩擦系数 Tungsten disulfide, RF sputter, Sputter technology, Chemical constitution, Friction coefficient
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