摘要
利用高温固相法合成了一种具有自激活发光行为的CdSiO3基质.对样品进行了X射线衍射分析和光谱分析.光谱分析结果表明,在偏硅酸镉的发射光谱中存在三个自激活发光峰,它们分别位于380,467和560nm处,另外,通过热释光谱技术讨论了偏硅酸镉中的缺陷及相关机理.在热释光谱中有两个明显的热释峰,分别位于448和563K,它们的陷阱深度分别为0 58和0 61eV,表明了在偏硅酸镉中存在着不同的陷阱,这些陷阱的存在导致了偏硅酸镉的自激活发光.
A new cadmium metasilicate matrix,which has the self-actived luminescence,was synthesized by solid-state reaction.The synthesized sample was characterized by X-ray diffraction,excitation and emission spectroscopy.There are three emission peaks in the self-actived cadmium metasilicate located at 380,467 and 560 nm,respectively.In addition,the thermoluminescence spectrum was adopted to discuss the mechanism of the self-actived luminescence of cadmium metasilicate.There are two obvious broad peaks in the thermoluminescence spectrum located at 448 and 563K,respectively.This result revealed that there were two different traps with various depth (0.58 and 0.61 eV)in the host lattice.
出处
《分子科学学报》
CAS
CSCD
2004年第1期57-59,共3页
Journal of Molecular Science
基金
国家自然科学基金资助项目(50072031
59982003)
广东省自然科学基金资助项目(990484)
关键词
偏硅酸镉
自激活发光
热释光
cadmium metasilicate
self-actived luminescence
thermoluminescence
