摘要
本文报道了等平面化自对准硅雪崩击穿电子发射阵列器件的结构设计和工艺过程。该器件的电子发射区域边缘的工艺台阶仅为10nm,其自对准的浅砷注入电流通道区宽度仅为3μm。与已报道的其它结构硅雪崩击穿电子发射器件相比较,该器件的电流电压特性曲线有更宽的线性区域和更低的通导电阻。本文也对其电子发射特性作了部分介绍。
The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array are introduced. The processing step at the edge of electron emission region is about 100 nm only and the width of self-aligned current channel of shallow.As implantation is about 3μm. Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices. Some of the electron emission characteristics are also discussed in the paper.
基金
国家自然科学基金
浙江省自然科学基金
关键词
真空微电子学
电子发射
冷阴极
Vacuum microelectronics, Electron emission, Cold cathode
