摘要
本文给出了从２００Ｋ到１０Ｋ低温下，硅双极晶体管击穿电压随温度而变化的实验结果，建立了理论模型。
In this paper,have to do with experimental results of break down voltages of silicon bipolar transistors at low temperature from 200K to 10K.Gives a theoretical model and the experimental results have been well explanation.
出处
《河北省科学院学报》
CAS
1997年第1期15-19,共5页
Journal of The Hebei Academy of Sciences
关键词
低温
击穿电子
晶体管
温度特性
Silicon bipolar transistor,Low-temperature,Breakdown voltage
