摘要
利用加速器产生的电子束（ＥＢ）在空气中辐照聚碳硅烷（ＰＣＳ），以使之形成交联结构，然后经高温热解转化成ＳｉＣ陶瓷。结果表明：在辐照产物中形成了ＳｉＣＳｉ以及ＳｉＯＳｉ等交联结构，热解温度以及热解陶瓷产率都随辐射吸收剂量增加而明显提高。通过ＴＧＩＲ联用分析技术，在热解产物中检测到了低分子量ＰＣＳ以及ＣＨ４等小分子化合物，在吸收剂量高于２．３ＭＧｙ时，ＰＣＳ主要通过析出ＣＨ４而热解成ＳｉＣ。
Polycarbosilane was irradiated in air by electron beam generated by an accelerator, and then heated to high temperature to produce the SiC ceramics The results showed that crosslinking bonds including Si C Si and Si O Si was formed in the irradiated products, and the pyrolysis temperature was consequently elevated from 300℃ of non irradiated PCS to more than 500℃ of samples irradiated to 2 3 MGy or above Low molecular weight polycarbosilane and CH 4 were detected in the pyrolysis products The PCS converted to SiC mainly by CH 4 release when absorbed dose was above 2 3 MGy
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
北大核心
1998年第1期1-4,共4页
Journal of Radiation Research and Radiation Processing
基金
中国工程物理研究院科学基金
关键词
聚碳硅烷
辐射处理
电子束
热解
碳化硅
陶瓷
Polycarbosilane, Radiation treatment, Electron beam, Pyrolysis, Silicon carbide ceramics
