摘要
采用最近邻的紧束缚的ｓｐ３ｓ模型，利用形式散射理论的格林函数方法，计算了ＩｎＡｓ（１１０）弛豫表面的电子结构，给出了表面投影能带和Ｍ点的层态密度，分析了产生表面态的原因和轨道特性以及驰豫引起表面态的变化，所得结论与实验和其他理论结果相符合．
Using the sp 3s * energy band model and the method of the formular scattering theory, the electronic structure of InAs(110) relaxed surface has been calculated, the projected surface band structure and the layer density of surface state at M point of InAs(110) have been presented.The reason of the origination of the surface states,the characteristic of the orbital and the change of the surface states upon relaxation discussed.The results are inconcordance with those from experiments and other theories.
出处
《河南大学学报（自然科学版）》
CAS
1998年第1期1-6,共6页
Journal of Henan University:Natural Science
