摘要
利用形式散射理论的格林函数方法及紧束缚最近邻近似下的 sp3s模型 ,首次计算了半导体 Si的(31 3)高指数表面的表面电子结构 .采用层轨道表象及表面投影技术 ,给出了 (31 3)表面在二维布里渊区高对称点的波矢可分辨的电子态密度和表面投影能带结构 .计算结果表明 :(31 3)表面在-1 0 e V到 +2 e V的能区内存在 6个主要的表面态 .在此基础上讨论了各表面态的色散特性。
The theoretical study of the electronic structure of the Si( 31 3) surface is firstly presented. The electronic structure is described by using the Green function method of the scattering theory and adopting the nearest neighbor tight binding sp3s model. Wave-vector-resolved surface densities of states and the surface band structure are obtained.The results show that there are six surface states in the range of-1 0 e V to2 e V.Some properties of these surface states are also discussed.
出处
《郑州大学学报（自然科学版）》
2001年第1期32-35,共4页
Journal of Zhengzhou University (Natural Science)
基金
河南省教委自然科学基金资助项目
