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量子点制备方法的研究进展 被引量:4

Development Status of Quantum Dot Fabrication Techniques
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摘要 量子点以其类似于原子的性质近年来受到很大关注.通过Stranski-Krastanow (SK)生长模式外延自组织生长的量子点具有诸多有利于红外应用的性质,例如工作温度较高、信噪比较大、暗电流较低、波段较宽以及垂直入射光响应等.对于新型红外探测器的研发而言,它们是一类很有潜力的候选者.本文主要对近期国外文献报道的量子点制备方法的部分研究进展做了总结和评述. Quantum dots have attracted considerable interest for their atomic-like properties in recent years. The quantum dots grown by epitaxial self-assembly via Stranski-Krastanow growth mode have many favorable properties for infrared application, such as higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. They are potential candidates for developing a new class of infrared detectors. Some of the latest published developments in the fabrication techniques of quantum dots abroad are summarized and reviewed in this paper.
作者 王忆锋
机构地区 昆明物理研究所
出处 《红外》 CAS 2008年第11期1-7,共7页 Infrared
关键词 量子点 量子点红外光子探测器 红外探测器 制备方法 quantum dot quantum-dot infrared photodetector infrared detector fabrication technique
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参考文献20

  • 1Steven A Mcdonald, Gerasimos Konstantatos, Shiguo Zhang, et al. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics [J]. Nature Materials, 2005, 4(2): 138-142.
  • 2S Y Wang, S C Chen, S D Lin, et al. InAs/GaAs quantum dot infrared photodetectors with different growth temperatures [J]. Infrared Physics & Technology, 2003, 44(5/6): 527-532.
  • 3M Mehta, D Reuter, A Melnikov, et al. Focused ion beam implantation induced site-selective growth of InAs quantum dots [J]. Applied Physics Letters, 2007, 91(12): 3108.
  • 4K Watanabe, N Koguchi, K Ishige, et al. High- Quality GaAs Quantum Dots Grown Using a Modied Droplet Epitaxy Technique [J]. Journal of the Korean Physical Society, 2001, 38(1): 25-28.
  • 5Ch Heyn, A Stemmann, A Schramm, et al. Faceting during GaAs quantum dot serf-assembly by droplet epitaxy [J]. Applied Physics Letters, 2007, 90(20): 3105.
  • 6W Q Ma, Y W Sun, X J Yang, et al. Enhanced infrared absorption of spatially ordered quantum dot arrays [J]. Infrared Physics & Technology, 2007, 50(2/3): 162-165.
  • 7E Pan, M Sun, P W Chung, et al. Three-dimensional kinetic Monte Carlo simulation of prepatterned quantum-dot island growth [J]. Applied Physics Letters, 2007, 91(19): 3110.
  • 8D S L Mui, D Leonard, L A Coldren, et al. Surface migration induced self-aligned InAs islands grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 1995, 66: 1620.
  • 9R Leon, S Chaparro, S R Johnson, et al. Dislocationinduced spatial ordering of InAs quantum dots: Effects on optical properties [J]. Journal of Applied Physics, 2002, 91:5826.
  • 10J M Ulloa, P M Koenraad, E Gapihan, et al. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy [J]. Applied Physics Letters, 2007, 91(7): 3106.

同被引文献36

  • 1何智兵,韩高荣,吴卫东,唐永建.真空热蒸发酞菁铜(CuPc)薄膜的结构及光学、电学性能研究[J].真空科学与技术学报,2005,25(4):278-282. 被引量:12
  • 2王景雪,张超,汤正新,陈庆东.半导体量子点的电子结构与其吸收峰波长的移动[J].洛阳师范学院学报,2007,26(2):41-44. 被引量:3
  • 3彭英才.半导体量子点的电子结构[J].固体电子学研究与进展,1997,17(2):165-172. 被引量:8
  • 4:Donald A Neamen著,赵毅强,姚素英,解晓东,等译.半导体物理与器件(第三版)[M].北京:电子工业出版社,2005年1月.
  • 5野村昭一郎 著,李彬,黄东律,等译.量子力学入门[M].北京:高等教育出版社,1985年1月.
  • 6D S 萨克林 著,苏耀中,叶安祚译.初等量子力学[M].北京;高等教育出版社,1985年11月.
  • 7NENON S, KANEHIRA D, YOSHIMOTO N, et al. Am- bipolar organic field -effect transistors based on CuPc and FI6CuI: hnpac/ of Ihe fine microstructure at or- ganic- organic interface[ J]. Synlh Met,2011,161 ( 17/ 18) :1 915-1 920.
  • 8MAFATLE T J, NYOKONG T. Electrocatalytic oxidation of cysteine by molybdenum(V) phthalocyanine comple- xes [ J ]. J Electoan a l Chem, 1996,408 ( 1/2 ) :213 -218.
  • 9PIZZINI S,TIMO G I,,BEGHI M,et al. Influence of the structure and morphology on the sensitivily to nitrogen oxides of phthalocyanine thin - fihn resistivity sensors [ J ]. Sens Actuatms, 1989,17 ( 3/4 ) :481-491.
  • 10TADYYON S M,GRANI)IN H M,(;RIFFITHS K,et al. CuPc bufir laver role in OLED pedbrmam'e:a study of the interfacial band energies [ J ]. Organic Eleclronics,2004,5 : 157-166.

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