摘要
本文对ａ－Ｃ：Ｈ膜的性质如折射率和生长速率的变化规律进行了研究，并且在增透原理的指导下制备了具有高红外透过率的单波段。
The article reports the effects of the bias voltage on the refractive index and the growth rate of a-C:H films have been comprehensively studied.The results show the refractive index and depositing rate increase with increasing the bias voltage. By this regular, a-C:H films used for the high IR-tran smittance by 3￣5μm and both 3￣5μm and 8￣12μm wave band and protective coating have been sucessfully deposited onto the Ge slice.
出处
《材料科学与工程》
CSCD
1994年第3期59-60,共2页
Materials Science and Engineering
关键词
氢化非晶态碳膜
折射率
红外透过率
Hydrogenated amorphus carbon (a-C : H) Film, Refractive index IR-transmittance
